?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com nzt605 rev. c nzt605 npn darlington transistor january 2007 nzt605 npn darlington transistor ? this device designed for applications requi ring extremely high gain at collector currents to 1.0a and high breakdown voltage. ? sourced from process 06. absolute maximum ratings * t c = 25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1. these ratings are based on a maximum junction temperature of 150 degrees c. 2. these are steady limits. the factory should be consulted on application involving pulsed or low duty cycle operations electrical characteristics * t c = 25c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% symbol parameter value units v ceo collector-emitter voltage 110 v v cbo collector-base voltage 140 v v ebo emitter-base voltage 10 v i c collector current - continuous 1.5 a t j , t stg operating and storage junction temperature range -55 to +150 c symbol parameter conditions min. max units off characteristics v (br)ceo collector-emitter breakdown voltage * i c = 10ma, i b = 0 110 v v (br)cbo collector-base breakdown voltage i c = 100 a, i e = 0 140 v v (br)ebo emitter-base breakdown voltage i e = 100 a, i c = 0 10 v i cbo collector cutoff current v cb = 120v, i e = 0 10 na i ces collector cutoff current v ce = 120v, i e = 0 10 na i ebo emitter cut-off current v eb = 8.0v, i c = 0 100 na on characteristics * h fe dc current gain v ce = 5.0v, i c = 50ma v ce = 5.0v, i c = 500ma v ce = 5.0v, i c = 1.0a v ce = 5.0v, i c = 1.5a v ce = 5.0v, i c = 2.0a 2000 5000 2000 300 200 100k v ce(sat) collector-emitter saturation voltage i c = 250ma, i b = 0.25ma i c = 1.0a, i b = 1.0ma 1 1.5 v v be(sat) base-emitter saturation voltage i c = 1.0a, i b = 1.0ma 1.8 v v be(on) base-emitter on voltage i c = 1.0a, v ce = 5.0v 1.7 v small signal characteristics f t transition frequency i c = 100ma, v ce = 10v, f = 20mhz 150 mhz sot-223 1. base 2.4. collector 3. emitter 1 2 4 3
2 www.fairchildsemi.com nzt605 rev. c nzt605 npn darlington transistor thermal characteristics t a = 25c unless otherwise noted * device mounted on fr-4pcb 36mm 18mm 1.5mm; mounting pad for the collector lead min. 6cm 2 symbol parameter max. units p d total device dissipation derate above 25 c 1,000 8.0 mw mw/ c r ja thermal resistance, junction to ambient 125 c/w
3 www.fairchildsemi.com nzt605 rev. c nzt605 npn darlington transistor mechanical dimensions 3.00 0.10 7.00 0.30 0.65 0.20 0.08max 3.50 0.20 1 .60 0.20 ( 0.46) ( 0.89) (0.60) (0.60) 1.75 0.20 0.70 0.10 4.60 0.25 6.50 0.20 (0.95) (0.95) 2.30 typ 0.25 max1.80 0 ~10 +0.10 ?.05 0.06 +0.04 ?.02 sot-223 dimensions in millimeters
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